Porous Density Dependent Photoluminescence from Porous Silicon
Author & Affiliation:
R. K. Tyagi
Physics Department, Govt. (P.G.) College, Khatima (Uttrakhand) - 262308 (INDIA)
B. D. Tyagi
CEERI, Pilani - (Rajasthan) INDIA
Pankaj Pathak
Physics Departmental, S.S.V., College, Hapur, Ghaziabad (U.P,.) 245101 (INDIA)
Keyword:
Porous Silicon (PS), Photoluminescence, Electroluminescence, Porosity, Quantum Wires
Issue Date:
April 2008
Abstract:
Porous silicon is obtained by electrochemical etching of single crystalline silicon with 48% hydrofluoric acid. In this work we calculate energy gap DE for different visible wavelengths in the white light spectrum by treating energy levels in the bands of porous silicon as Bohr levels. This emission of monochromatic visible wavelengths is related to porous density of porous silicon (p-si) material. These visible wavelengths are expected to be emitted from degenerate energy levels above band gap.
Pages:
1-4
ISSN:
2319-8052 (Online) - 2231-3478 (Print)
Source:
PDF:
DOI:
jusps-B
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R. K. Tyagi; B. D. Tyagi; P. Pathak, "Porous Density Dependent Photoluminescence from Porous Silicon", Journal of Ultra Scientist of Physical Sciences, Volume 20, Issue 1, Page Number 1-4, 2018Copy the following to cite this URL:
R. K. Tyagi; B. D. Tyagi; P. Pathak, "Porous Density Dependent Photoluminescence from Porous Silicon", Journal of Ultra Scientist of Physical Sciences, Volume 20, Issue 1, Page Number 1-4, 2018Available from: http://www.ultraphysicalsciences.org/paper/1352/
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