Silicon-on-insulator (SOI) wafers are precisely engineered multilayer semiconductor/dielectric structures that provide new functionality for advanced Si devices. It also improves prospects for extending Si devices into the nanometer region (<10 nm channel length). SOI technology possesses many advantages over bulk silicon technology such as reduction of parasitic capacitance, excellent sub-threshold slope, elimination of latch up and resistance to radiation. Hence it is preferred for high speed, high -temperature and low power microelectronic devices. An SOI microchip processing speed is often 30% faster than today's complementary metal-oxide semiconductor (CMOS)-based chips and power consumption is reduced 80%, which makes them suitable for mobile devices.